Method for reducing low frequency noise of transistor
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United States of America Patent
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Nov 1, 2011
Grant Date -
Sep 23, 2010
app pub date -
Mar 18, 2009
filing date -
Mar 18, 2009
priority date (Note) -
Expired
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Abstract
A method for reducing low frequency noise of a transistor operable at cryogenic temperatures includes a first step in which the transistor is illuminated with a light in a state that the transistor is activated and flowed current by supplying a power at a predetermined temperature, and a second step in which the transistor is operated at the predetermined temperature after the illumination of the light.
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