Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
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United States of America Patent
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Oct 25, 2011
Grant Date -
Mar 18, 2010
app pub date -
Oct 5, 2007
filing date -
Oct 5, 2006
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Expired
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Abstract
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.
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