CMOS time delay integration sensor for X-ray imaging applications
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United States of America Patent
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Oct 18, 2011
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N/A
app pub date -
Nov 30, 2010
filing date -
Dec 4, 2009
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Abstract
A CMOS TDI image sensor consists of M pixels where each pixel is formed by a column of N TDI stages. Each TDI stage contains a photodiode that collects photo-charge and a pre-amplifier that proportionally converts the photo-charge to a voltage. Each TDI stage also has a set of capacitors, amplifiers, and switches for storage of the integrated signal voltages, where Correlated Double Sampling (CDS) technique (true or pseudo) maintains both photo-signal and reset voltages simultaneously. The CDS signal voltages can be passed from one TDI stage to the next TDI stage along a column for summing. The CDS signal voltages of the last TDI stages of M pixels are read out with a differential amplifier. This CMOS TDI structure is especially advantageous for implementing X-ray scanning detector systems requiring large pixel sizes and signal processing circuitry that is physically separated from the photodiode array for X-ray shielding.
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