Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
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United States of America Patent
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Oct 18, 2011
Grant Date -
Mar 3, 2011
app pub date -
Nov 14, 2009
filing date -
Aug 26, 2009
priority date (Note) -
Expired
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Abstract
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
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