Method for fabricating a semiconductor device and the semiconductor device made thereof
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United States of America Patent
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Oct 11, 2011
Grant Date -
Jul 23, 2009
app pub date -
Dec 19, 2008
filing date -
Dec 20, 2007
priority date (Note) -
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Abstract
A method for fabricating a semiconductor device and the device made thereof are disclosed. In one aspect, the method includes providing a substrate comprising a semiconductor material. The method further includes patterning at least one fin in the substrate, the fin comprising a top surface, at least one sidewall surface, and at least one corner. A supersaturation of point defects is created in the at least one fin. The at least one fin is annealed and then cooled down such that semiconductor atoms of the semiconductor material migrate via the point defects.
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