Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 8026164
APP PUB NO 20100164119A1
SERIAL NO

12603207

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LIMITED2-10-23 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Shinichi Tokyo, JP 52 681
Owada, Tamotsu Tokyo, JP 40 325
Takesako, Satoshi Tokyo, JP 4 62

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