Semiconductor and manufacturing method for the same
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United States of America Patent
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Sep 20, 2011
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app pub date -
Nov 23, 2009
filing date -
Nov 24, 2008
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Abstract
A semiconductor device and a manufacturing method for the same are disclosed. The semiconductor device includes a gate pattern formed at an upper part of the semiconductor substrate to overlap one side of a drift region, and a shallow oxide region disposed adjacent to the gate pattern, having a shallower depth than a plurality of device isolation layers.
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