Phase change memory devices with reduced programming current
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United States of America Patent
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Sep 20, 2011
Grant Date -
Apr 5, 2007
app pub date -
Mar 3, 2006
filing date -
Mar 11, 2005
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Abstract
A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.
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