Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

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United States of America Patent

PATENT NO 8021641
APP PUB NO 20110189080A1
SERIAL NO

12658204

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Abstract

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Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

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Patent Owner(s)

Patent OwnerAddress
HELIO VOLT CORPORATION6801-8 E STASSNEY LANE AUSTIN TX 78744

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Curtis, Calvin J Lakewood, US 22 421
Ginley, David S Evergreen, US 40 684
Leisch, Jennifer Denver, US 2 14
Miedaner, Alexander Boulder, US 14 142
Stanbery, Billy J Austin, US 32 873
Taylor, Matthew West Simsbury, US 66 874
van, Hest Marinus Franciscus Antonius Maria Lakewood, US 26 98

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