Low forward voltage drop transient voltage suppressor and method of fabricating

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8014117
APP PUB NO 20080013240A1
SERIAL NO

11820547

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Abstract

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A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

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Patent Owner(s)

  • VISHAY GENERAL SEMICONDUCTOR, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kao, Lung-Ching Taipei, TW 15 47
Kung, Pu-Ju Taipei, TW 7 121
Yu, Yu-Ju Taipei, TW 3 9

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