Semiconductor device and method for fabricating the same
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United States of America Patent
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Sep 6, 2011
Grant Date -
May 11, 2006
app pub date -
Nov 10, 2005
filing date -
Nov 10, 2004
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Abstract
F can be located apart from active regions of a substrate for MOS transistors. This suppresses the influence of the increased gate length due to hammerhead and gate flaring. As a result, transistors TrA through TrF can have substantially the same finished gate length.
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