Electron beam apparatus and method of generating an electron beam irradiation pattern
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United States of America Patent
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Aug 30, 2011
Grant Date -
Apr 1, 2010
app pub date -
Dec 3, 2009
filing date -
Sep 13, 2005
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Abstract
High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
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