III-nitride compound semiconductor light emitting device comprising layer with pinhole structure
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United States of America Patent
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Aug 16, 2011
Grant Date -
Feb 11, 2010
app pub date -
Nov 15, 2006
filing date -
Nov 16, 2005
priority date (Note) -
Expired
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Abstract
The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.
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