Method for dehydrogenation treatment and method for forming crystalline silicon film
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United States of America Patent
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Aug 16, 2011
Grant Date -
Oct 1, 2009
app pub date -
Mar 4, 2009
filing date -
Mar 25, 2008
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Expired
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Abstract
A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.
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