Methods of etching silicon-containing films on silicon substrates
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United States of America Patent
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Aug 16, 2011
Grant Date -
Feb 3, 2011
app pub date -
Sep 24, 2010
filing date -
Sep 24, 2010
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Expired
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Abstract
F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.
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