Poly diode structure for photo diode

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7993956
APP PUB NO 20070138589A1
SERIAL NO

11618685

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Abstract

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An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

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Patent Owner(s)

Patent OwnerAddress
TRANSPACIFIC IP LTD14TH FLOOR NO 205 DUNHUA N ROAD ROOM 1402 TAIPEI CITY 105

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chyh-Yih Hsinchu, TW 51 471
Chuang, Che-Hao Hsinchu, TW 51 322
Ker, Ming-Dou Hsinchu, TW 284 4774
Shiu, Yu-Da Hsinchu, TW 5 26

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  • 2 Citation Count
  • H01L Class
  • 3.01 % this patent is cited more than
  • 14 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1702407123365539219115410570614515901 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0200400600800100012001400160018002000220024002600

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