Apparatus and method for conformal mask manufacturing
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United States of America Patent
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Aug 9, 2011
Grant Date -
Jul 3, 2008
app pub date -
Nov 21, 2007
filing date -
Nov 22, 2006
priority date (Note) -
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Abstract
A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.
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