Semiconductor device with a field stop zone and process of producing the same
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United States of America Patent
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Aug 2, 2011
Grant Date -
Mar 6, 2008
app pub date -
Aug 31, 2006
filing date -
Aug 31, 2006
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Abstract
Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
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