Superconducting magnesium boride thin-film and process for producing the same

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United States of America Patent

PATENT NO 7985713
APP PUB NO 20090062128A1
SERIAL NO

11909512

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Abstract

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Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

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Patent Owner(s)

Patent OwnerAddress
INCORPORATED NATIONAL UNIVERSITY IWATE UNIVERSITYMORIOKA-SHI IWATE 020-8550

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endo, Haruyuki Iwate, JP 9 241
Harada, Yoshitomo Iwate, JP 1 6
Yoshizawa, Masahito Iwate, JP 9 140

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