Semiconductor device manufacturing method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 19, 2011
Grant Date -
Feb 25, 2010
app pub date -
Aug 17, 2009
filing date -
Aug 20, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device manufacturing method includes: providing a laminated member in which at least a first GaAs layer, an InAlGaAs layer and a second GaAs layer are laminated on or above a substrate in this order; and etching the second GaAs layer using the InAlGaAs layer as an etching stopper layer. A ratio of In:Al of the InAlGaAs layer is in a range of approximately 4:6 to approximately 6:4 and a ratio of (In+Al):Ga of the InAlGaAs layer is in a range of approximately 1.5:8.5 to approximately 5:5.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully