Transient enhanced atomic layer deposition
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United States of America Patent
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Jul 19, 2011
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N/A
app pub date -
Mar 1, 2004
filing date -
Apr 23, 2003
priority date (Note) -
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Abstract
A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.
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