High voltage BICMOS device and method for manufacturing the same
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United States of America Patent
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Jul 12, 2011
Grant Date -
Nov 12, 2009
app pub date -
Jul 20, 2009
filing date -
Dec 28, 2005
priority date (Note) -
Expired
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Abstract
A high voltage BICMOS device and a method for manufacturing the same, which may improve the reliability of the device by securing a distance between adjacent DUF regions, are provided. The high voltage BICMOS device includes: a reverse diffusion under field (DUF) region formed by patterning a predetermined region of a semiconductor substrate; a diffusion under field (DUF) region formed in the substrate adjacent to the reverse DUF region; a spacer formed at a sidewall of the reverse DUF region; an epitaxial layer formed on an entire surface of the substrate; and a well region formed in contact with the DUF region.
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