HBT/FET process integration
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United States of America Patent
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Jul 12, 2011
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N/A
app pub date -
Nov 15, 2007
filing date -
Nov 15, 2007
priority date (Note) -
Withdrawn
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Abstract
A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.
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