Method of forming a gate insulator in group III-V nitride semiconductor devices
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United States of America Patent
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Jul 12, 2011
Grant Date -
May 26, 2011
app pub date -
Jun 27, 2007
filing date -
Dec 6, 2004
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Abstract
A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
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