High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean
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United States of America Patent
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Jul 12, 2011
Grant Date -
May 14, 2009
app pub date -
Nov 12, 2008
filing date -
Nov 13, 2007
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Abstract
A composition for removing particulate matter from integrated circuit substrates, including (a) one or more metal ion-free base; (b) a water-soluble metal ion-free onium salt of a polyhedral silsesquioxane; (c) an oxidizing agent; and (d) metal ion-free water, and a composition obtained by combining ingredients including (a), (b), (c) and (d). A process for removing particulate matter from a surface of an integrated circuit device, including applying to the surface the composition including (a), (b), (c) and (d) or applying to the surface the composition obtained by combining ingredients including (a), (b), (c) and (d).
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