Photo sensor with a low-noise photo element, sub-linear response and global shutter
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United States of America Patent
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Jul 5, 2011
Grant Date -
Apr 16, 2009
app pub date -
Oct 14, 2008
filing date -
Oct 15, 2007
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Abstract
A photo sensor exhibiting low noise, low smear, low dark current, high dynamic range and global shutter functionality consists either of a pinned (or buried) photodiode or a photo-sensitive charge-coupled device, each with associated transfer gate, a sub-linear element, a shutter transistor, a reset circuit and a read-out circuit. Using two output paths global shutter and high speed operation are possible for the linear and the sub-linear output of the sensor. Because of its compact size, the photo sensor can be employed in one- and two-dimensional image sensors, fabricated with industry-standard CMOS and CCD technologies.
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