Group-III nitride light-emitting device
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United States of America Patent
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Jun 28, 2011
Grant Date -
Aug 27, 2009
app pub date -
Feb 20, 2009
filing date -
Feb 22, 2008
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Abstract
N (0.15≦X<1, where X is a strained composition). The basal plane of the gallium nitride based semiconductor region is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane of a hexagonal system group III nitride. The basal plane in this range is a semipolar plane.
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