Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
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United States of America Patent
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Jun 21, 2011
Grant Date -
Jun 18, 2009
app pub date -
Feb 2, 2009
filing date -
Mar 17, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
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