Thin film piezoelectric resonator and method for manufacturing the same

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Jun 21, 2011
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Dec 31, 2009
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Aug 24, 2007
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Aug 25, 2006

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Abstract

or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C. or higher is performed under non-oxygenated atmosphere.

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Patent Owner	Address
MEMS SOLUTION CO LTD	4F INSTITUTE OF ADVANCED ENGINEERING 175-28 GOANRO 51 BAEKAMMYEON CHEOINGU YONGIN CITY KYUNGGIDO 449-863

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Fukuda, Shinji	Ube, JP	45	348
Iwashita, Kazuki	Ube, JP	12	154
Nagao, Keigo	Ube, JP	18	605

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Thin film piezoelectric resonator and method for manufacturing the same

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United States of America Patent

12438794

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PATENT NO	7965017
APP PUB NO	20090322186A1
SERIAL NO	12438794
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 21, 2011	US,7965017,B2 US7965017B2	GRANTED PATENT AS SECOND PUBLICATION
December 31, 2009	US,20090322186,A1 US20090322186A1	FIRST PUBLISHED PATENT APPLICATION

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12438794

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