Semiconductor light-emitting device and method of manufacturing the same
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United States of America Patent
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Jun 21, 2011
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Oct 29, 2009
app pub date -
Sep 5, 2006
filing date -
Sep 6, 2005
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Abstract
Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
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