Bi-axial texturing of high-K dielectric films to reduce leakage currents
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United States of America Patent
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Jun 7, 2011
Grant Date -
Jan 28, 2010
app pub date -
Oct 6, 2009
filing date -
Dec 7, 2004
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Abstract
The present invention is directed to methods of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a high-K dielectric material assisted with an ion beam to enable the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric films have a high degree of crystallographic alignment at grain boundaries. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The result is a dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.
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