Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation
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United States of America Patent
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Jun 7, 2011
Grant Date -
Sep 23, 2010
app pub date -
Mar 17, 2009
filing date -
Mar 17, 2009
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Abstract
Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.
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