Process for fabricating crown capacitors of dram and capacitor structure
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United States of America Patent
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May 31, 2011
Grant Date -
Jul 15, 2010
app pub date -
Jan 14, 2009
filing date -
Jan 14, 2009
priority date (Note) -
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Abstract
A process for fabricating crown capacitors is described. A substrate having a template layer thereon is provided. A patterned support layer is formed over the template layer. A sacrifice layer is formed over the substrate covering the patterned support layer. Holes are formed through the sacrifice layer, the patterned support layer and the template layer, wherein the patterned support layer is located at a depth at which bowing of the sidewalls of the holes occurs and is bowed less than the sacrifice layer at the sidewalls. A substantially conformal conductive layer is formed over the substrate. The conductive layer is then divided into lower electrodes of the crown capacitors.
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