Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter
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United States of America Patent
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May 24, 2011
Grant Date -
Feb 7, 2008
app pub date -
Dec 21, 2005
filing date -
Dec 22, 2004
priority date (Note) -
Expired
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Abstract
Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission.bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- C01B:NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B05D:PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MAT....
- B01J:CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, CO....
- H05H:PLASMA TECHNIQUE
- C01D:COMPOUNDS OF ALKALI METALS, i.e. LITHIUM, SODIUM, ....
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