Constant reference cell current generator for non-volatile memories

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United States of America Patent

PATENT NO 7944281
APP PUB NO 20100148855A1
SERIAL NO

12334338

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Abstract

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A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (I.sub.REF).

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Patent Owner(s)

Patent OwnerAddress
MOSYS INC755 NORTH MATHILDA AVENUE SUNNYVALE CA 94085

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rao, Vithal San Jose, US 2 30
Yu, Da-Guang Fremont, US 3 32

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