Compound semiconductor epitaxial substrate and method for producing the same
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United States of America Patent
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May 3, 2011
Grant Date -
Jul 2, 2009
app pub date -
May 28, 2007
filing date -
May 31, 2006
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wherein A=(a concentration of all p-type carriers in an active state due to an acceptor impurity contained in the epitaxial layer on the back side of the channel layer)×(a total thickness of the epitaxial layer on the back side), and B=(a concentration of all p-type carriers in an active state due to an acceptor impurity contained in the epitaxial layer on the front side of the channel layer)×(a total thickness of the epitaxial layer on the front side).
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