Method of forming light-emitting device using nitride bulk single crystal layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 3, 2011
Grant Date -
May 8, 2008
app pub date -
Jan 4, 2008
filing date -
Oct 26, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The object of this invention is to provide a high-output type nitride light emitting device.or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane.N (0≦x≦1) can be formed at a low temperature not causing damage to the active layer.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully