Systems and methods for fabricating self-aligned memory cell
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United States of America Patent
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Apr 26, 2011
Grant Date -
Jan 17, 2008
app pub date -
Jul 14, 2006
filing date -
Jul 14, 2006
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Expired
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Abstract
(PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.
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