Semiconductor devices and methods for generating light
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United States of America Patent
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Apr 19, 2011
Grant Date -
Jul 29, 2010
app pub date -
Jan 24, 2009
filing date -
Jan 24, 2009
priority date (Note) -
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Abstract
Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light.
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