P-channel power MIS field effect transistor and switching circuit

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United States of America Patent

PATENT NO 7928518
SERIAL NO

12568415

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Abstract

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In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

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Patent Owner(s)

Patent OwnerAddress
OHMI TADAHIRO1-17-301 KOMEGAHUKURO 2-CHOME AOBA-KU SENDAI-SHI MIYAGI 980-0813

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akahori, Hiroshi Kanagawa, JP 69 1110
Nii, Keiichi Miyagi, JP 18 104
Ohmi, Tadahiro Miyagi, JP 798 14083
Teramoto, Akinobu Miyagi, JP 114 811
Watanabe, Takanori Shizuoka, JP 208 2636

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