Method for fabricating semiconductor device
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United States of America Patent
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Apr 19, 2011
Grant Date -
Feb 11, 2010
app pub date -
Jan 18, 2008
filing date -
Jan 18, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A fabricating method of a polysilicon layer is disclosed which can be applied for fabricating a semiconductor device such as a SRAM and so on. The method for fabricating the semiconductor device includes the steps of: forming a transistor included in the semiconductor device on a semi conductor substrate forming an insulating layer on the transistor; forming contact holes, through which a region of the transistor is exposed, by selectively removing the insulating layer forming a silicon layer in the contact holes forming a metal layer on the insulating layer and the silicon layer; forming a metal suicide layer through heat treatment of the silicon layer and the metal layer; removing the metal layer; forming an amorphous silicon layer on the insulating layer and the metal suicide layer; and forming a polysilicon layer through heat treatment of the amorphous silicon layer.
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