Method for crystallizing semiconductor with laser beams

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Apr 19, 2011
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Jun 8, 2005
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May 17, 2002

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Expired

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C, rotatably disposed above the second stage to support an amorphous semiconductor.

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Patent Owner	Address
SHARP KABUSHIKI KAISHA	22-22 NAGAIKE-CHO ABENO-KU OSAKA 545-8522

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Sasaki, Nobuo	Kawasaki, JP	114	2781
Uzuka, Tatsuya	Shinjuku, JP	9	52

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Method for crystallizing semiconductor with laser beams

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United States of America Patent

11147611

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US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
April 19, 2011	US,7927935,B2 US7927935B2	GRANTED PATENT AS SECOND PUBLICATION
December 01, 2005	US,20050264824,A1 US20050264824A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7927935
SERIAL NO	11147611
DOCKET NO

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11147611

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