Method to enhance the initiation of film growth
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United States of America Patent
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Apr 19, 2011
Grant Date -
Aug 17, 2006
app pub date -
Feb 16, 2005
filing date -
Feb 16, 2005
priority date (Note) -
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Abstract
The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.
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