Varactor element and low distortion varactor circuit arrangement
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United States of America Patent
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Apr 12, 2011
Grant Date -
Nov 27, 2008
app pub date -
Nov 24, 2006
filing date -
Nov 24, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A varactor element having a junction region, in which the depletion capacitance of the varactor element varies when a reverse bias voltage is applied to the varactor element. The varactor element has an exponential depletion capacitance-voltage relation, e.g. obtained by providing a predetermined doping profile in the junction region. The varactor element can be used in a narrow tone spacing varactor stack arrangement, in which two varactor elements are connected in an anti-series configuration. A low impedance path for base band frequency components between a control node and each of two RF connection nodes is provided, while for fundamental and higher order harmonic frequencies, a high impedance path is provided.
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