Higher selectivity, method for passivating short circuit current paths in semiconductor devices
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United States of America Patent
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Apr 12, 2011
Grant Date -
Oct 1, 2009
app pub date -
Jun 3, 2009
filing date -
Aug 13, 2007
priority date (Note) -
Expired
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Abstract
A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.
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