Laser crystallization method for amorphous semiconductor thin film
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United States of America Patent
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Apr 5, 2011
Grant Date -
Apr 15, 2010
app pub date -
Oct 9, 2009
filing date -
Oct 14, 2008
priority date (Note) -
Expired
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Abstract
A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorbent layer 3 on the desired specific local areas of the amorphous silicon thin film 2 and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 2 including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3.
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