III-nitride semiconductor light emitting device
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United States of America Patent
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Mar 29, 2011
Grant Date -
Jun 18, 2009
app pub date -
Aug 21, 2008
filing date -
Dec 17, 2007
priority date (Note) -
Expired
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Abstract
The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.
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