Method for forming MIM in semiconductor device
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United States of America Patent
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Mar 22, 2011
Grant Date -
May 15, 2008
app pub date -
Oct 24, 2007
filing date -
Nov 13, 2006
priority date (Note) -
Expired
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Abstract
The present invention relates to a semiconductor device, and more particularly to a method for forming a metal/insulator/metal (MIM). The method comprises the steps of: forming a metal wiring surrounded by the inter-metal dielectric film; forming a plurality of insulating film on the metal wiring in sequence; and forming a metal barrier film on the insulating film, whereby the insulating film functioning as a buffer film can mitigate the stress between the films.
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