Semiconductor storage device and method of manufacturing same

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United States of America Patent

PATENT NO 7907451
APP PUB NO 20100296341A1
SERIAL NO

12665320

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Abstract

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is reduced. After data is stored, when 0 V or a negative voltage is applied to the potential control gate, a potential barrier for an electron moving from the floating gate to the channel of the transistor increases, thereby preventing erasure of data.

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Patent Owner(s)

Patent OwnerAddress
EMPIRE TECHNOLOGY DEVELOPMENT LLC2711 CENTERVILLE ROAD SUITE 400 WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwasaki, Hiroshi Osaka, JP 176 3471

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