Semiconductor device and method of fabricating the same
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United States of America Patent
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Mar 15, 2011
Grant Date -
Mar 5, 2009
app pub date -
Aug 29, 2008
filing date -
Sep 4, 2007
priority date (Note) -
Expired
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Abstract
A semiconductor device capable of preventing malfunction of a Schottky diode to reduce a failure ratio of the semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes first and second CMOS switching devices formed over a silicon substrate, a Schottky diode formed in a Schottky diode region, and a Schottky diode isolation film surrounding the Schottky diode region and isolating the Schottky diode from the silicon substrate.
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